发明名称 |
Manufacturing method of semiconductor light emitting diode |
摘要 |
A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure (20) including a first conductive semiconductor layer (21), an active layer (22), and a second conductive semiconductor layer (23) on a substrate (10) with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion (211) corresponding to the prominences and depressions; forming a protection layer (30) on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion (211); and forming a second concavoconvex portion (212) on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure (20) including a first conductive type semiconductor layer (21), an active layer (22), and a second conductive type semiconductor layer (23); a first concavoconvex portion (211) formed on the light emission structure and having a second concavoconvex portion (212) at a convex portion thereof; and a protection layer (30) filling up a concave portion of the first concavoconvex portion. |
申请公布号 |
EP2403022(A2) |
申请公布日期 |
2012.01.04 |
申请号 |
EP20110168861 |
申请日期 |
2011.06.07 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
KIM, KI SUNG;KIM, GI BUM;KIM, TAE HUN;SHIN, YOUNG CHUL;KIM, YOUNG SUN |
分类号 |
H01L33/22;H01L33/00;H01L33/20 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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