<p>The present vapor deposition apparatus (1A) has: a reactor (20) in which a substrate (31) on which a thin film is to be formed by vapor disposition; gas introduction ports (14) for introducing gas; a gas distribution cavity (13) for dispersing gas; a shower head (10) having a shower plate (11) equipped with a plurality of gas flow paths (15) for supplying gas from the gas distribution cavity (13) to the interior of the reactor (20); and exhaust ports (26) for releasing gas from the reactor (20) to the outside. The gas distribution space (13) in the shower head (10) is a space having the shower plate (11) as the bottom surface thereof, and has a first cavity (131) on the side further from the exhaust apertures (26) of the reactor (20), and a second cavity (132) on the side closer to the exhaust ports (26) of the reactor (20). The first cavity (131) is formed at a higher position than that of the second cavity (132).</p>
