GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN AND METHOD OF FABRICATIONG THE SAME AND TRANSISTOR HAVING THE SAME

摘要

PURPOSE: Graphene, a method for manufacturing the same, and a transistor including the same are provided to substitute boron and nitrogen in the graphene at the same ratio using borazine or ammonia borane as a precursor. CONSTITUTION: Band gap is formed in graphene by substituting a part of carbon atoms with boron and nitrogen. 1-20% of the carbon atoms in the graphene are substituted. The density difference of the boron and the nitrogen is 1013cm^-2 or less. When the graphene is formed through a chemical vapor deposition method, borazine or ammonia borane is used as the precursor of the boron and the nitrogen.