发明名称 |
Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line |
摘要 |
A resistance changing memory unit cell includes a current control component operably coupled to a bit sense line, and a resistance changing memory element coupled between the current control component and a word line. |
申请公布号 |
US8085615(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20070724773 |
申请日期 |
2007.03.16 |
申请人 |
TAGUCHI MASAO;SPANSION LLC |
发明人 |
TAGUCHI MASAO |
分类号 |
G11C8/08 |
主分类号 |
G11C8/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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