发明名称 MANUFACTURING METHOD OF THIN FILM TRANSISTOR CIRCUIT BOARD AND THIN FILM TRANSISTOR CIRCUIT BOARD
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film transistor circuit board in which threshold voltage variation or dielectric breakdown short circuit of a thin film transistor due to static electricity can be minimized, and to provide the thin film transistor circuit board. <P>SOLUTION: The manufacturing method of a thin film transistor circuit board having a thin film transistor and an electrostatic induction element on a substrate includes: a first photolithographic step for forming a pattern of a semiconductor layer of the thin film transistor on the semiconductor layer provided on the substrate; a second photolithographic step for forming a pattern of a semiconductor layer of the electrostatic induction element, and a step for etching the semiconductor layer provided on the substrate. The semiconductor layer of the thin film transistor and the semiconductor layer of the electrostatic induction element are formed by performing these steps. Hardening temperature of a photoresist in the first photolithographic step is higher than that in the second photolithographic step. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011258697(A) 申请公布日期 2011.12.22
申请号 JP20100131091 申请日期 2010.06.08
申请人 CANON INC 发明人 YOSHITOKU DAISUKE;ICHINOSE TAKESHI;TAMURA MASAHIRO
分类号 H01L29/786;H01L21/28;H01L21/336;H01L21/822;H01L27/04;H01L51/50;H05B33/02 主分类号 H01L29/786
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