| 摘要 |
In one embodiment, a semiconductor device including a substrate provided with a semiconductor element, and first and second interconnects provided above the substrate, each of the first and second interconnects having a line shape in a plan view, and the first and second interconnects being substantially parallel to each other. The device further includes a first via plug provided above the substrate, electrically connected to a lower surface of the first interconnect on a second interconnect side, and including a first recess part at an upper end of the first via plug under a first region between interconnects, the first region between interconnects being a region between the first interconnect and the second interconnect. The device further includes a via layer insulator provided above the substrate and including the first via plug, and a first trench under the first region between interconnects, the first trench including a region adjacent to the first via plug in a width direction of the first and second interconnects. Furthermore, an air gap is included in the first region between interconnects and in the first trench. |
