发明名称 |
SOURCE AND DRAIN FEATURE PROFILE FOR IMPROVING DEVICE PERFORMANCE AND METHOD OF MANUFACTURING SAME |
摘要 |
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region. |
申请公布号 |
US2011312145(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US20100816519 |
申请日期 |
2010.06.16 |
申请人 |
TSAI MING-HUAN;CHENG CHUN-FAI;OUYANG HUI;CHIU YUAN-HUNG;CHEN YEN-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI MING-HUAN;CHENG CHUN-FAI;OUYANG HUI;CHIU YUAN-HUNG;CHEN YEN-MING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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