摘要 |
<p>Disclosed is a method for manufacturing a thin film, wherein a film is stably formed at high efficiency using a nozzle-type evaporation source, while eliminating scattering and deposition of an unnecessary film-forming material prior to starting film formation. Air is released from a film-forming chamber (17) and an evaporation chamber (16), and in a state wherein differential pressure is ensured between both the chambers by means of a variable conductance structure (34), pressure inside of the chambers is adjusted to predetermined pressure or more by introducing a nonreactive gas into the evaporation chamber (16), and evaporation of the film-forming material is suppressed. In the same state, pressure inside of the film-forming chamber (17) is adjusted to predetermined pressure or more by introducing the nonreactive gas into the film-forming chamber, and after changing the state by operating the variable conductance structure (34), an open plane (14) is brought in proximity to a substrate (21) by moving the evaporation source (19) by means of a moving mechanism (35), pressure inside of both the chambers are reduced to less than the predetermined pressure, the suppressing of the evaporation of the film-forming material is stopped, and film formation is started.</p> |
申请人 |
PANASONIC CORPORATION;HONDA, KAZUYOSHI;BESSHO, KUNIHIKO;SHIMADA, TAKASHI |
发明人 |
HONDA, KAZUYOSHI;BESSHO, KUNIHIKO;SHIMADA, TAKASHI |