发明名称 METHOD FOR FORMING A DOPED REGION IN A SEMICONDUCTOR LAYER OF A SUBSTRATE AND USE OF SUCH METHOD
摘要 A method of forming a doped region in a semiconductor layer of a substrate by alloying with doping elements is disclosed. In one aspect, the method includes screen printing a paste layer of doping element paste to the substrate and firing the screen printed paste layer of doping element paste, wherein a highly pure doping element layer is applied to the semiconductor layer after which the paste layer is screen printed to the doping element layer.
申请公布号 US2011309489(A1) 申请公布日期 2011.12.22
申请号 US201113162507 申请日期 2011.06.16
申请人 SINGH SUKHVINDER;IMEC 发明人 SINGH SUKHVINDER
分类号 H01L21/24;H01L23/48;H01L31/18 主分类号 H01L21/24
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