SINGLE-ELECTRON TRANSISTOR HAVING CHARGE STORAGE LAYER AND FABRICATION METHOD OF THE SAME

摘要

PURPOSE: A single-electron transistor which includes a charge storage layer and a manufacturing method thereof are provided to inject an electron or hole in the charge storage layer equipped in an insulating layer of a control gate, thereby controlling an oscillation starting point of a device. CONSTITUTION: A source region(22) and drain region(24) are separately arranged with a fixed interval while placing a channel region between the source region and drain region. A control gate(40) is arranged on the channel region while placing a first gate insulating film(30) between the control gate and channel region. A charge storage layer(34) is included in the first gate insulating film. Two side gates(60) are arranged while placing a second gate insulating film(52) between the side gates. An insulating film sidewall(70) is arranged in both sides of the two side gates.