METHOD FOR MANUFACTURING RESISTIVE SWITCHING MEMORY WITH CROSS-POINT STRUCTURE AND RESISTIVE SWITCHING MEMORY WITH CROSS-POINT STRUCTURE PREPARED BY USING THE METHOD

摘要

PURPOSE: A resistance alteration memory and a manufacturing method thereof are provided to improve manufacture yield by self-forming a Schottky barrier through an oxidation-reduction reaction of a p-type oxide layer and an n-type metal layer without an additional process of a transistor and a diode. CONSTITUTION: A p-type oxide layer(20) is formed by depositing one among PCMO(Pr1-XCaXMnO3), LCMO(La1-XCaXMnO3), and LSMO(La1-xSrxMnO3). An n-type barrier metal layer(30) is formed by depositing an n-type reactivity metal on the upper side of the p-type oxide layer. A Schottky barrier is formed by reacting the p-type oxide layer and the -type barrier metal layer. The n-type barrier metal is formed on entire or a part of the upper side of the p-type oxide layer. The thickness of the p-type oxide layer is 10nm to 120nm. The thickness of n-type barrier metal layer is 1nm to 10nm.