| 摘要 |
A semiconductor device includes: an insulating layer formed on a substrate; a plurality of interlayer insulating films which are formed on the insulating layer and comprise an opening window; a multilayer wiring which is formed with a plurality of wiring layers and a plurality of vias formed in the plurality of interlayer insulating films; a metal pad connected with the multilayer wiring, an upper surface part of the metal pad being a bottom part of the opening window, the metal pad formed closer to the substrate than a wiring layer of a lowermost layer of the plurality of wiring layers and is; and a pad ring provided on the metal pad, the pad ring penetrating the plurality of interlayer insulating films and the pad ring surrounding the opening window.
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