LDPMOS STRUCTURE FOR ENHANCING BREAKDOWN VOLTAGE AND SPECIFIC ON RESISTANCE IN BICMOS-DMOS PROCESS

摘要

An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a lightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.