NONVOLATILE MEMORY DEVICE, PROGRAM METHOD THEREOF, MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE, ELECTRONIC EQUIPMENT AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of reducing a change in a threshold voltage due to coupling noise, Vpass failure and Vpgm failure, a programming method thereof, a memory system including the nonvolatile memory device, electronic equipment and a system.

SOLUTION: The nonvolatile memory device of the present invention includes: a memory cell array composed of a plurality of physical pages; and a program sequencer for determining a program sequence such that the plurality of physical pages are secondarily programmed after the plurality of physical pages are primarily programmed. A program state P0 of a primary program operation is lower than a word line voltage applied to the plurality of physical pages in a bit line setup section of a secondary program operation.

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