发明名称 |
METHOD OF FABRICATING METAL-BEARING INTEGRATED CIRCUIT STRUCTURES HAVING LOW DEFECT DENSITY |
摘要 |
A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater. |
申请公布号 |
US2011306207(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US20100816381 |
申请日期 |
2010.06.15 |
申请人 |
RAGHAVAN SRINIVAS;CHERUKURI KALYAN;LILLIBRIDGE THOMAS E.;FAUST RICHARD A.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAGHAVAN SRINIVAS;CHERUKURI KALYAN;LILLIBRIDGE THOMAS E.;FAUST RICHARD A. |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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