| 摘要 |
The capacitance between a conductive layer 20 overlying conductive electrodes 8 (&6) and 12 is measured to determine the thickness of the gate insulating layer 18 which lies between the conductive layer and the electrodes. The capacitive effects of the variability of the overlap between the conductive layer and the electrodes is compensated by subtracting the capacitance value measured between the electrode 12 and the overlying conductive layer 20 from the capacitance value measured between the electrode 8,6 and the conductive layer. The capacitance between the electrode 6 and the overlying conductive layer is largely independent with respect to changes in overlap of the conductive layer 20 with respect to the underlying conductive electrodes 8 & 12. Therefore, the thickness of the gate dielectric layer 18 can be determined accurately. |
