发明名称 Substrate processing apparatus and a substrate processing method
摘要 A gas injection head 200 is provided above a substantial center of a substrate W. Nitrogen gas introduced from a gas feed port 291 is injected from a slit-shaped injection port 293 via an internal buffer space BF. In this way, a radial gas flow substantially isotropic in a horizontal direction while having an injection direction restricted in a vertical direction is generated above the substrate. Thus, dust D, mist M and the like around the substrate are blown off in outward directions and do not adhere to the substrate W. The gas injection head 200 can be made smaller than the diameter of the substrate W and needs to be neither retracted from the substrate surface nor rotated, wherefore an apparatus can be miniaturized.
申请公布号 US8075731(B2) 申请公布日期 2011.12.13
申请号 US20080259567 申请日期 2008.10.28
申请人 MIYA KATSUHIKO;DAINIPPON SCREEN MFG. CO., LTD. 发明人 MIYA KATSUHIKO
分类号 C23C16/00;H01L21/304 主分类号 C23C16/00
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