| 摘要 |
<p>#CMT# #/CMT# The method involves bonding a receiver substrate (2) and a donor substrate (1) i.e. silicon on insulator substrate, by molecular adhesion, and applying heat treatment to a substrate stack to consolidate a bond interface between the substrates. The donor substrate is thinned by grinding. Annular trimming of the donor substrate and a portion of the receiver substrate is carried out. Chemical etching of an exposed surface of a portion of the donor substrate and an exposed surface of the receiver substrate, is carried out using etching solution i.e. tetramethylammonium hydroxide. #CMT#USE : #/CMT# Method for bonding and transferring a material layer from a donor substrate i.e. silicon on insulator (SOI) substrate (claimed), to a receiver substrate, during fabrication of a multilayer substrate utilized in electronics, optics and opto-electronics field. #CMT#ADVANTAGE : #/CMT# The method avoids the problems of flaking and of de-lamination of the final substrate and avoids the formation of a transferred layer with irregular circumference. The method bonds and transfers the material layer from the donor substrate to the receiver substrate in a simple, rapid and inexpensive manner. The method enables the temperature of the heat treatment to the substrate to be modest, so as to avoid the degradation of electronic components. The method permits smoothing out of a topology associated with the presence of the components and to provide the characteristics required for bonding the material layer to the surfaces of the substrates. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view illustrating a method for bonding and transferring a material layer from a donor substrate to a receiver substrate. 1 : Donor substrate 2 : Receiver substrate 11 : Insulating layer 14 : Front face of donor substrate 15 : Rear face of donor substrate #CMT#INORGANIC CHEMISTRY : #/CMT# The donor and receiver substrates are made of silicon.</p> |
