| 摘要 |
A method to manufacture Copper Indium Gallium di Selenide (Cu(In,Ga)Se2) thin film solar cell includes evaporating elemental Cu, In, Ga, and Se flux sources onto a heated substrate in a single vacuum system to form a non-intentionally doped Cu(In,Ga)Se2 p-type conductivity layer and exposing the p-type conductivity layer to a thermally evaporated flux of Beryllium (Be) atoms to convert a surface layer of the p- type conductivity layer to an n-type conductivity layer resulting in a buried Cu(In,Ga)Se2 p-n homojunction. Also, the source of Be atoms includes a circular rod of Be having a uniform cross-section that is resistively heated and having its temperature controlled by passing an electrical current through the rod. |
