发明名称 |
Vertical Structure Semiconductor Memory Devices And Methods Of Manufacturing The Same |
摘要 |
A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed on the first region of the substrate in a vertical direction, but separated from each other along a sidewall of the semiconductor region; a gate dielectric layer disposed between the semiconductor region and the plurality of gate electrodes; a substrate contact electrode extending vertically from the impurity-doped second region of the substrate; and an insulating region formed as an air gap between the substrate contact electrode and at least one of the plurality of gate electrodes.
|
申请公布号 |
US2011298013(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113081776 |
申请日期 |
2011.04.07 |
申请人 |
HWANG SUNG-MIN;KIM HAN-SOO;SHIM SUN-IL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SUNG-MIN;KIM HAN-SOO;SHIM SUN-IL |
分类号 |
H01L23/52;H01L29/78 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|