| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve cleaning problems in a dry etching device for treating a high-k/metal gate. <P>SOLUTION: After dry etching of a high-k/metal gate structure, plasma cleaning of gas containing chlorine such as Cl<SB POS="POST">2</SB>and BCl<SB POS="POST">3</SB>and no fluorine is performed, followed by plasma cleaning of gas containing fluorine such as SF<SB POS="POST">6</SB>, CF<SB POS="POST">4</SB>and NF<SB POS="POST">3</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
