发明名称 |
CHARGE TRAPPING DEVICES WITH FIELD DISTRIBUTION LAYER OVER TUNNELING BARRIER |
摘要 |
A memory cell comprising: a semiconductor substrate with a surface with a source region and a drain region disposed below the surface of the substrate and separated by a channel region; a tunneling barrier dielectric structure with an effective oxide thickness of greater than 3 nanometers disposed above the channel region; a conductive layer disposed above the tunneling barrier dielectric structure and above the channel region; a charge trapping structure disposed above the conductive layer and above the channel region; a top dielectric structure disposed above the charge trapping structure and above the channel region; and a top conductive layer disposed above the top dielectric structure and above the channel region are described along with devices thereof and methods for manufacturing.
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申请公布号 |
US2011300682(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113210202 |
申请日期 |
2011.08.15 |
申请人 |
LUE HANG-TING;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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