| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining desired characteristics by reliably controlling a threshold voltage of a p-channel field effect transistor, and to provide a method of manufacturing the same. <P>SOLUTION: In an element formation region RP, as heat treatment is performed under a temperature of about 700 to 900°C, aluminum (Al) in an aluminum (Al) film 7a diffuses into a hafnium oxide nitride (HfON) film 6, thereby aluminum (Al), as an element, is added to the hafnium oxide nitride (HfON) film 6. Additionally, aluminum (Al) and titanium (Ti) in a hard mask 8a composed of a titanium aluminum nitride (TiAlN) film diffuse into the hafnium oxide nitride (HfON) film 6, thereby aluminum (Al) and titanium (Ti), as elements, are added to the hafnium oxide nitride (HfON) film 6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
