| 摘要 |
Provided are novel inspection methods and systems for inspecting photomasks to identify various defects using a model-based approach and information obtained from modeled images. Modeled or simulation images are generated directly from test or reference images. Some examples include aerial images that represent expected patterns projected by a lithography system on a substrate as well as photoresist images that represent expected resist patterns. Test images are first represented as a band limited mask pattern, which may include only linear terms for faster image processing. This pattern is then used to construct a modeled image, which in turn is used to construct a model-based feature map. This map serves as a base for inspecting the original test images to identify photomask defects and may include information that allows differentiating between various feature types based on their lithographic significance and other characteristics. |
