| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase amounts of light received by phase difference detection pixels in a solid state imaging device where the phase difference detection pixels are constructed by forming openings of a light-shielding film so as to be displaced from optical axes of microlenses. <P>SOLUTION: A CCD image sensor 10 that is a solid state imaging device includes a first phase difference detection pixel 12 and a second phase difference detection pixel 13. The phase difference detection pixels 12 and 13 are provided with downwardly convex inner lenses 37b and 37c formed in a downwardly convex hemispherical shape, respectively. The downwardly convex inner lenses 37b and 37c are formed by performing isotropic etching on a BPSG film, which is a source of a first flattening layer 33, to thereby form concave portions, which are hemispherically concave, in the BPSG film and forming an SiN film on the BPSG film to thereby fill in each concave portion with SiN. By doing so, it becomes possible to form each of the downwardly convex inner lenses 37b and 37c of the phase difference detection pixels 12 and 13 in the downwardly convex hemispherical shape appropriately, which makes it possible to increase an amount of light received by each of the phase difference detection pixels 12 and 13. <P>COPYRIGHT: (C)2012,JPO&INPIT |
