STACKED SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF REPAIRING DEFECTS OF THROUGH SILICON VIAS

摘要

PURPOSE: A laminate semiconductor memory device, a memory system including the same, and a method for repairing a penetration electrode defect are provided to improve yield by repairing the penetration electrode defect. CONSTITUTION: A plurality of memory chips(120-150) are laminated on the upper side of a processor chip(110). A plurality of penetration electrodes(161) pass through the memory chips. Input and output buffers are combined between the memory chips and the penetration electrodes and selectively activated based on the defective status of the penetration electrodes. The input and output buffers are included in the memory chips.