发明名称 |
Atomic layer deposition of hafnium lanthanum oxides |
摘要 |
There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed. |
申请公布号 |
US8071452(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090430751 |
申请日期 |
2009.04.27 |
申请人 |
RAISANEN PETRI I.;ASM AMERICA, INC. |
发明人 |
RAISANEN PETRI I. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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