发明名称 |
Method for creating nonequilibrium photodetectors with single carrier species barriers |
摘要 |
A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers. |
申请公布号 |
US8072801(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20100788490 |
申请日期 |
2010.05.27 |
申请人 |
VELICU SILVIU;GREIN CHRISTOPH H.;SIVANANTHAN SIVALINGAM;EPIR TECHNOLOGIES, INC. |
发明人 |
VELICU SILVIU;GREIN CHRISTOPH H.;SIVANANTHAN SIVALINGAM |
分类号 |
G11C11/36;H01L21/00 |
主分类号 |
G11C11/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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