THIN FILM SEMICONDUCTOR DEVICE FOR DISPLAY DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE FOR DISPLAY DEVICE

摘要

Disclosed is a thin film semiconductor device for a display device, which comprises a gate wiring line having low electrical resistance, while reducing the parasitic capacitance in a region where the gate wiring line and a metal wiring line intersect each other by forming a gate electrode and the gate wiring line so as to have appropriate film thicknesses respectively. Specifically disclosed is a thin film semiconductor device for a display device, which comprises: a gate wiring line (21) that is composed of a first gate wiring line (120) and a second gate wiring line (122); a first gate electrode that is extended from the first gate wiring line (120); a gate insulating film; an insulating layer (150); a source wiring line (22); and a power supply wiring line (23). The second gate wiring line (122) is formed to have a predetermined thickness on the first gate wiring line (120) in regions other than the region where the source wiring line (22) and the power supply wiring line (23) intersect each other, and the insulating layer (150) is formed to have the predetermined thickness between the source wiring line (22) and the power supply wiring line (23) in the above-mentioned intersecting region.