| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for promoting microfabrication, while suppressing an OFF current of a polysilicon diode as a selection element in a nonvolatile memory device, by reducing thickness of the device. <P>SOLUTION: A polysilicon layer, which is a field relaxation layer of a polysilicon diode PD as a selection element of a resistance change memory, and in which impurity with low concentration is doped, is formed in two or more separate layers such as polysilicon layers 51p and 52p. Thereby, it is suppressed that a crystal grain boundary which penetrates an interlayer between an n-type polysilicon layer 60p side and a p-type polysilicon layer 40p is formed in the field relaxation layer. Moreover, occurrence of a leak current flowing through the crystal grain boundary during application of a reverse bias is prevented without increase of height of the polysilicon diode PD. <P>COPYRIGHT: (C)2012,JPO&INPIT |
