发明名称 COPPER INTERCONNECTION STRUCTURE WITH MIM CAPACITOR AND A MANUFACTURING METHOD THEREOF
摘要 The present invention discloses a copper interconnection structure with MIM capacitor and a manufacturing method thereof. The method firstly makes a copper conductive pattern in a copper interconnection structure and a copper through hole bolt connected with the copper conductive pattern; etch away an insulation layer around the copper through hole bolt and deposit a etch stop layer, so as to expose the top and side surface of the copper through hole bolt and part of the top surface of the copper conductive pattern; deposit a dielectric layer on the obtained structure and fill a protection material in the recession area of the obtained structure; etch a trench for receiving other copper conductive patterns; remove the protection material; plate copper in the recession area, and plate copper in the trench, so as to obtain a copper interconnection structure with MIM capacitor.
申请公布号 US2011291235(A1) 申请公布日期 2011.12.01
申请号 US20100937264 申请日期 2010.07.14
申请人 XIAO DEYUAN;HUANG XIAOLU;SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATIONTECHNOLOGY, CHINESE ACADEMY 发明人 XIAO DEYUAN;HUANG XIAOLU
分类号 H01L29/02;H01L21/02 主分类号 H01L29/02
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