发明名称 |
Silocon wafer supporting method, heat treatment jig and heat-treated wafer |
摘要 |
Provided is a method applicable to the production of silicon wafers having crystal orientation <100> or <110> and consisting in specifying wafer-supporting positions on the occasion of heat treatment in a vertical heat treatment furnace as well as a heat treatment jig for use in carrying out that method. It becomes possible to suppress the shear stress which contributes to the extension of the slip generated at each wafer-supporting element contact point as an initiation, suppress slip growth and thus markedly improve the yield of heat-treated silicon wafers. The heat-treated wafer obtained by using the supporting method and the heat treatment jig has few slip, in particular has no long and large slip, and is high in quality. |
申请公布号 |
US8067820(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20070311833 |
申请日期 |
2007.10.15 |
申请人 |
KIHARA TAKAYUKI;SUMCO CORPORATION |
发明人 |
KIHARA TAKAYUKI |
分类号 |
H01L29/04;A47G19/08;B05C13/00;B05C13/02;B05C21/00;F27D5/00 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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