发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain region sandwiching a first gate electrode with the first source region. The second transistor includes an LDD region and a drift region sandwiching the second gate electrode with the LDD region, and a second drain region adjacent to the drift region to sandwich the second gate electrode with the second source region. The first gate electrode has a first sidewall formed on sides thereof and the second gate electrode has a second sidewall formed on sides thereof. The width of the former along the first insulator differs from the width of the latter along the second insulator. |
申请公布号 |
US8067801(B2) |
申请公布日期 |
2011.11.29 |
申请号 |
US20080181692 |
申请日期 |
2008.07.29 |
申请人 |
MATSUDAI TOMOKO;YASUHARA NORIO;OBATAKE MANJI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUDAI TOMOKO;YASUHARA NORIO;OBATAKE MANJI |
分类号 |
H01L29/735 |
主分类号 |
H01L29/735 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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