发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE
摘要 <p>Abstract Method for manufacturing a semiconductor substrateThe invention relates to a method for manufacturing a semiconductor substrate, in particular a semiconductor-on-insulator substrate, comprising the steps of a) providing a donor substrate and a handle substrate, b) forming a pattern of one or more doped regions in, in particular in side, the handle substrate, and then c) attaching, in particular by bonding, the donor and the handle substrate to obtain a donor-handle compound.Figure 3a</p>
申请公布号 SG175497(A1) 申请公布日期 2011.11.28
申请号 SG20110020385 申请日期 2011.03.22
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 CARLOS MAZURE;KONSTANTIN BOURDELLE;RICHARD FERRANT;BICH-YEN NGUYEN
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