COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

摘要

A compound semiconductor device includes: an Au alloy electrode, an interlayer insulating film, a metal interconnection, and an oxide film. The Au alloy electrode is formed on a compound semiconductor. The interlayer insulating film is formed on the Au alloy electrode. The metal interconnection is connected to the Au alloy electrode via a contact hole formed in the interlayer insulating film. The oxide film is formed at an interface between the Au alloy electrode and the interlayer insulating film, dominating component of the oxide film is a constituent element of the compound semiconductor.