LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

摘要

A light emitting diode and the manufacturing method thereof are provided. Said light emitting diode includes: a substrate; an epitaxial layer, an active layer and a cap layer are located in sequence on said substrate; wherein said substrate has multiple microlens structures on its surface far away from the epitaxial layer, and the surface of said microlens structures has multiple salients. When the light emitted from the active layer goes through the surfaces of said microlens structures or those of said salients, its incident angle is always smaller than the critical angle of total reflection, thus total reflection will not occur, thereby ensuring that most light can goes outside through the surfaces of said microlens structures or those of said salients, improving the external quantum efficiency of the light emitting diode, avoiding an internal temperature rise of the light emitting diode, and improving the performance of the light emitting diode.