| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method, a device and a computer-readable code for reading data out of one or more flash memory cells and for restoration from a reading error. <P>SOLUTION: In the event of failure to correct an error by an error detection and correction module, re-reading out of a flash memory cell is attempted at least once by using one or more correction reference voltages. For some time after the error is successfully corrected, no data (for instance a reliable value of data that have been read out) are re-written in, and subsequent read-out requests are processed. The reference voltage regarding the reading for which the error was corrected may be stored in a memory to be read out when responding to any request for read-out. The reference voltage for correction is a predetermined reference voltage. Or it may be determined by using a value figured out at random as required or according to information provided by the error detection and correction module. <P>COPYRIGHT: (C)2012,JPO&INPIT |
