| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress power consumption while maintaining data readout speed. <P>SOLUTION: A semiconductor memory device comprises a bit line BL; a plurality of word lines (corresponding to WLA1-WLAn); memory cells (corresponding to CellB1-CellBn) that are located at respective intersections between the bit line BL and the plurality of word lines and each of which includes a switch element (corresponding to TrA1) on/off controlled by a signal of the word line and a memory element (corresponding to RB1) being able to have a read-out current flowing through the bit line BL when the switch element is closed; and a sense amplifier (corresponding to 1A) that amplifies the read-out current flowing through the bit line BL, and is configured to have a constant current value of the read-out current flowing into the memory element in a conductive state when the memory element in the memory cell, in which a signal of the connected word line is activated, is in the conductive state, irrespective of a connection position of the bit line BL of the memory cell. <P>COPYRIGHT: (C)2012,JPO&INPIT |
