发明名称 |
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.
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申请公布号 |
US2011284905(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US201113191026 |
申请日期 |
2011.07.26 |
申请人 |
YOKOGAWA TOSHIYA;OYA MITSUAKI;YAMADA ATSUSHI;KATO RYOU;PANASONIC CORPORATION |
发明人 |
YOKOGAWA TOSHIYA;OYA MITSUAKI;YAMADA ATSUSHI;KATO RYOU |
分类号 |
H01L33/50;H01L21/22;H01L29/20 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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