PROCESS FOR PRODUCTION OF THIN FILM SEMICONDUCTOR DEVICE FOR DISPLAYING PURPOSES

摘要

Disclosed is a process for producing a thin film semiconductor device for displaying purposes, which comprises: a first step of providing a glass substrate (1); a second step of forming an undercoat layer (2) on the glass substrate (1); a third step of forming a molybdenum metal layer (3M) on the undercoat layer (2); a fourth step of forming a gate electrode (3) from the molybdenum metal layer (3M); a fifth step of forming a gate insulating film (4) on the gate electrode (3); a sixth step of forming an amorphous semiconductor layer (5a) on the gate insulating film (4); a seventh step of carrying out an annealing treatment at a temperature ranging from 700 to 900°C to crystallize the amorphous semiconductor layer (5a), thereby forming a polycrystalline semiconductor layer (5p); and an eighth step of forming a source electrode (8a) and a drain electrode (8b) above the polycrystalline semiconductor layer (5p). The process also comprises a step of carrying out a reduction reaction treatment of the interface between the undercoat layer (2) and the gate electrode (3) at least once at any time subsequent to the second step and prior to the seventh step.