| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device that can reduce ON resistance and switching noise. <P>SOLUTION: The power semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type provided on the first semiconductor layer periodically in a lateral direction. A fourth semiconductor layer of the second conductivity type is provided on the third semiconductor layer, and a fifth semiconductor layer of the first conductivity type is selectively provided on a surface of the fourth semiconductor layer. The power semiconductor device has a first main electrode connected to the first semiconductor layer and a second main electrode connected to the fourth semiconductor layer and the fifth semiconductor layer. The power semiconductor device also has a first insulating film provided on a side wall of a trench groove reaching the second semiconductor layer from a surface of the fifth semiconductor layer, a second insulating film provided on a bottom side of the trench groove with respect to the first insulating film and having a higher dielectric constant than that of the first insulating film, and a control electrode buried in the trench groove via the first insulating film and the second insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
