GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS
摘要
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.
申请公布号
WO2011141228(A1)
申请公布日期
2011.11.17
申请号
WO2011EP55044
申请日期
2011.03.31
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;SLEIGHT, JEFFREY;BANGSARUNTIP, SARUNYA;COHEN, GUY