| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase use efficiency of light emission with respect to an optical coupling device constituted in the form of one chip. <P>SOLUTION: In a light receiving element region B1, a light receiving element 10 is formed, and a light emitting element 20 is formed on one principal surface of an Si substrate (semiconductor substrate) 11 in a light emitting element region B2. An insulating substrate 40 is bonded to the other principal surface of the Si substrate 11 with an insulating adhesive 41. Further, the light receiving element 10 and light emitting element 20 are electrically isolated from each other by a groove 50 formed in the Si substrate 11. The light receiving element 10 is a phototransistor comprising a collector region (Si substrate 11), a base region 12, and an emitter region 13. The light emitting element 20 comprises an n-type GaN layer 21, an MQW layer 22, and a p-type GaN layer 23. A light receiving surface of the light receiving element 10 is formed in the Si substrate 11, and a light emitting surface of the light emitting element 20 is formed in a semiconductor layer formed on the Si substrate 11, so that the light receiving surface and light emitting surface are different in height. <P>COPYRIGHT: (C)2012,JPO&INPIT |
