| 摘要 |
Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a depletion layer generated at a junction interface between the p-type substrate (1) and the n-type well (2). In the trenches (22) having a depth larger than that of a depletion layer (K1) generated on a bottom side of the n-type well (2) and a width larger than that of depletion layers (K2, K3) generated on sides of the n-type well (2) are provided so as to remove junction interfaces (J2, J3) on the sides of the n-type well (2), and an insulating layer (21) is buried in the trenches (22). |
