发明名称 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
摘要 PURPOSE: A substrate processing apparatus and a substrate processing method are provided to improve the deposit efficiency of a substrate by creating a pressure gradient within a chamber and prevent reacting gas which is exhausted by an exhaust pipe to back up to the chamber. CONSTITUTION: A chamber comprises an internal reaction space. An exhaust device comprises an exhaust pipe(162) and an exhaust pump. An exhaust control part controls gas exhaust volume by being connected to the exhaust pipe. The exhaust control part comprises housing(11) and a sliding-gate(33). The sliding-gate is formed into a plurality of plates. The plates include a connecting hole which is formed in top and bottom directions.
申请公布号 KR20110123939(A) 申请公布日期 2011.11.16
申请号 KR20100043435 申请日期 2010.05.10
申请人 WONIK IPS CO., LTD. 发明人 CHOI, YOUNG CHUL;KIM, HWAN DONG;KONG, CHUL MIN;KWON, YOUNG SOO
分类号 H01L21/02 主分类号 H01L21/02
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