发明名称 |
FinFET structure with multiply stressed gate electrode |
摘要 |
A semiconductor structure and its method of fabrication include a semiconductor fin located over a substrate. A gate electrode is located over the semiconductor fin. The gate electrode has a first stress in a first region located closer to the semiconductor fin and a second stress which is different than the first stress in a second region located further from the semiconductor fin. The semiconductor fin may also be aligned over a pedestal within the substrate. The semiconductor structure is annealed under desirable stress conditions to obtain an enhancement of semiconductor device performance. |
申请公布号 |
US8058157(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20090505894 |
申请日期 |
2009.07.20 |
申请人 |
ZHU HUILONG;LUO ZHIJIONG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;LUO ZHIJIONG |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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