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发明名称
化合物半导体发光元件晶圆之制法
摘要
申请公布号
TWI352435
申请公布日期
2011.11.11
申请号
TW094112402
申请日期
2005.04.19
申请人
昭和電工股份有限公司 日本
发明人
楠木克辉
分类号
H01L33/00
主分类号
H01L33/00
代理机构
代理人
何金涂 台北市大安区敦化南路2段77号8楼;何秋远 台北市大安区敦化南路2段71号18楼
主权项
一种化合物半导体发光元件晶圆之制法,其特征为依序包含:在基板上介由隔离带域呈规则性且连续排列有多数化合物半导体发光元件的化合物半导体发光元件晶圆的表面(半导体侧)之隔离带域上形成沟部的步骤;研磨基板的背面以使表面粗细度Ra(算术平均粗细度)成为0.001μm~2μm之步骤;在晶圆的表面形成保护膜的步骤;在形成保护膜之面上的分离带域,以雷射法对雷射照射部喷射气体,同时形成宽度比沟部小之割槽的步骤;及除去该保护膜之至少一部分的步骤。
地址
日本
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