| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a larger area of p-n junction where a current flows by forming a trench-type insulation layer, compared to the case of forming an element isolation region, in a one-side two-electrode diode; to prevent concentration of current on a bend of the p-n junction (a tip) by avoiding the current flowing in a lateral direction; and to form a low-resistive layer in a current path by connecting the other electrode (the electrode without the p-n junction underneath) to a high-concentration embedded layer so that the diode is hardly damaged even when the current is concentrated, thereby improving ESD resistance. <P>SOLUTION: The semiconductor device comprises an anode region, a cathode region and a trench-type insulation layer formed between a p-type layer and an n-type layer on a chip surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
