SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THEREOF
摘要
<p>PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to secure the uniformity of a cell current by forming semiconductor patterns with excellent step coating. CONSTITUTION: A buffer insulating film(105) is formed on a semiconductor substrate(100). A thin film structure is formed on the buffer insulating film and consists of a plurality of thin films. The thin film structure is patterned and a penetration area(130) is formed on the thin film structure. A first silicon film(152) is formed to cover the penetration area. A second silicon film(154) is formed on the first silicon film.</p>
申请公布号
KR20110122523(A)
申请公布日期
2011.11.10
申请号
KR20100042081
申请日期
2010.05.04
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PAKR, HONG BUM;YOO, DAE HAN;LEE, EUN YOUNG;HYUNG, YONG WOO;YOU, YOUNG SUB;BOK, JIN KWON