| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency switching circuit capable of suppressing generation of secondary higher-harmonic distortion. <P>SOLUTION: A high-frequency switching circuit of the present invention at least includes first switches (T11-T14) located between a common terminal and a first terminal and second switches (T21-T24) located between the common terminal and a second terminal. In a field effect transistor provided in the first switch, compensation capacitors (Cdb11-Cdb14) for offsetting a parasitic capacity generated when the first switch is in an off state are formed between a drain and a body or between a source and a body. Also, in a field effect transistor provided in the second switch, compensation capacitors (Cdb21-Cdb24) for offsetting a parasitic capacity generated when the second switch is in an off state are formed between a drain and a body or between a source and a body. <P>COPYRIGHT: (C)2012,JPO&INPIT |
